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FLX-2320-S Thin Film Stress Measurement

Nanofabrication Facility

MAKE

Toho

MODEL

FLX-2320-S

LOCATION

Cleanroom G07 LISE

The FLX-2320-S determines stress by measuring the curvature change of pre- and post- film deposition. It can measure film stress from -65ºC to 500ºC at a heating rate up to 30ºC/min. Stress variation with temperature is able to be used to characterize film properties, such as moisture concentration, phase changes, thermal expansion, volume changes, and plastic deformations.

Other characteristics of the instrument include:
– Dual wave lengths
– Calculation of biaxial modules of elasticity, linear expansion coefficient, stress uniformity and file subtraction
– Calculation of water diffusion coefficient
– 2-D and 3-D view of wafer topography
– Wafer size: 75 – 200 mm
– Measurement temperature: from -65ºC to 500ºC
– PC base controller
– Speed: 5 sec for 150 mm wafer
– Minimum scan step: 0.02 mm
– Maximum points per scan: 1250

Contact staff for training information.

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